| 彭祥飞,江浩,邓林.基于GaN技术的大功率T/R组件可靠性设计与分析[J].装备环境工程,2020,17(12):115-118. PENG Xiang-fei,JIANG Hao,DENG Lin.Reliable Design and Analysis of High Power T/R Module Based on GaN Technology[J].Equipment Environmental Engineering,2020,17(12):115-118. |
| 基于GaN技术的大功率T/R组件可靠性设计与分析 |
| Reliable Design and Analysis of High Power T/R Module Based on GaN Technology |
| 投稿时间：2020-07-07 修订日期：2020-09-04 |
| DOI：10.7643/issn.1672-9242.2020.12.018 |
| 中文关键词: T/R组件 GaN芯片 高可靠性 电路设计 热设计 |
| 英文关键词:T/R module GaN MMIC high reliability circuit design thermal design |
| 基金项目:国防科工局技术基础科研项目(JSZL2016210B001) |
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| 中文摘要: |
| 结合T/R组件的工作原理，对影响大功率T/R组件可靠性的关键技术进行了设计与分析。通过与现有的基于GaAs技术的T/R组件设计电路对比分析，阐述了基于GaN技术的大功率、高可靠性T/R组件的电路设计方法。 |
| 英文摘要: |
| Combined with the working principle of T/R module, the key technologies affecting the reliability of high-power T/R module were designed and analyzed. Compared with the existing T/R module design circuit based on GaAs technology, the circuit design method of high power and high reliability T/R module based on GaN technology was described. |
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