Inorganic Acid Emission Factors of Semiconductor Manufacturing Processes

Abstract

A huge amount of inorganic acids can be produced and emitted with waste gases from integrated circuit manufacturing processes such as cleaning and etching. Emission of inorganic acids from selected semiconductor factories was measured in this study. The sampling of the inorganic acids was based on the porous metal denuders, and samples were then analyzed by ion chromatography. The amount of chemical usage was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County according to the Taiwan Environmental Protection Agency regulation. The emission factor is defined as the emission rate (kg/month) divided by the amount of chemical usage (L/month). Emission factors of three inorganic acids (i.e., hydrofluoric acid [HF], hydrochloric acid [HQ], and sulfuric acid [H₂SO₄]) were estimated by the same method. The emission factors of HF and HCl were determined to be 0.0075 kg/L (coefficient of variation [CV] = 60.7%, n = 80) and 0.0096 kg/L (CV = 68.2%, n = 91), respectively. Linear regression equations are proposed to fit the data with correlation coefficient square (R²) = 0.82 and 0.9, respectively. The emission factor of H₂SO₄, which is in the droplet form, was determined to be 0.0016 kg/L (CV = 99.2%, n = 107), and its R² was 0.84. The emission profiles of gaseous inorganic acids show that HF is the dominant chemical in most of the fabricators.     

Field enhancements of packed-bed performance for low-concentration acidic and basic-waste gases from semiconductor manufacturing process

Low-concentration acidic and basic-waste gas pollutants contribute significantly in the total emission of a facility. Previous results show that the control of high volumetric flow rate (approximately 500 m3/min), low-concentration acidic (< 1 ppm by vol) and basic (< 3 ppm by vol) gases from semiconductor process vent, by conventional wet scrubbing technique is a challenging task. This work was targeted to enhance the performance of packed beds for high-volumetric flow rate, low-concentration acidic (HF, HCl), and basic (NH3)-waste gases from the semiconductor manufacturing process. The methodology used to meet the goal was the application of fine-water mist over the inlet stream before entering to the packed bed and use of the surfactant with mist/packed-bed liquid in low concentration. An experimental study was carried out in two acid-packed beds to optimize the operating conditions, such as pH of the liquid, circulating liquid flow rate, blow-down cycle, and so forth. The relationship among liquid pH, liquid ionic concentration, and the removal efficiency of the packed bed for the pollutants has been discussed considering chemical equilibrium, two-film theory, and Henry's law. For the potential utilization of scrubbing water, the dependency of the efficiency on blow-down cycle was studied, and a mechanism is suggested. The proposed water-mist surfactant system was installed in two acid-packed beds, and performance of the packed beds was compared. The background efficiencies of the acid-packed beds for HF, HCl, and NH3 were found max to be (n = 11) 53, 40, and 27%, whereas after installation of the system, they increased significantly and became 76 +/- 13% (n = 10), 76 +/- 8% (n = 7), and 78 +/- 7% (n = 7), respectively, for inlet concentrations of HF and HCl < 1 ppm and NH3 < 14 ppm. The mechanism by which the surfactants operate to enhance the removal in scrubbing process is suggested considering the hydrodynamic effect and the interfacial effect with the charge-generating characteristic of surfactants on water surface, when dissolved into water. The results show that a proposed rectification system can effectively reduce the emission rates below the regulatory level (0.6 kg/hr) at the present conditions of the facility.     

Energy conversion from electrolyte concentration gradient using charged nano-pores

Power generation based on the reversed electro-dialysis (RED) cell is studied both numerically and experimentally in this work. The membrane that separates the concentrated and dilute electrolytes is treated as a charged nano-pore array. Both numerical and experimental results show that the RED cell performance is similar to the typical electrochemical cell having a linearly varied current–voltage relation. The open circuit voltage and short-circuit current depend on the ion selectivity of the nano-pore membrane, which is related to the concentration ratio, pore surface charge density, and pore size. The highest energy conversion efficiencies are approximately 48% and 24% from numerical predictions and experimental measurements, respectively. The reason for this discrepancy is attributed to the inhomogenous pore size and surface charge density distributions of the Al₂O₃ membrane used in these experiments.     

Emission characteristics of volatile organic compounds from semiconductor manufacturing

A huge amount of volatile organic compounds (VOCs) is produced and emitted with waste gases from semiconductor manufacturing processes, such as cleaning, etching, and developing. VOC emissions from semiconductor factories located at Science-Based Industrial Park, Hsin-chu, Taiwan, were measured and characterized in this study. A total of nine typical semiconductor fabricators (fabs) were monitored over a 12-month period (October 2000-September 2001). A flame ionization analyzer was employed to measure the VOC emission rate continuously in a real-time fashion. The amount of chemical use was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County as per the regulation of the Taiwan Environmental Protection Administration. The VOC emission factor, defined as the emission rate (kg/month) divided by the amount of chemical use (L/month), was determined to be 0.038 +/- 0.016 kg/L. A linear regression equation is proposed to fit the data with the correlation coefficient (R2)=0.863. The emission profiles of VOCs, which were drawn using the gas chromatograph/mass spectrometer analysis method, show that isopropyl alcohol is the dominant compound in most of the fabs.     

Emission Characteristics of Volatile Organic Compounds from Semiconductor Manufacturing

Abstract

A huge amount of volatile organic compounds (VOCs) is produced and emitted with waste gases from semiconductor manufacturing processes, such as cleaning, etching, and developing. VOC emissions from semiconductor factories located at Science-Based Industrial Park, Hsin-chu, Taiwan, were measured and characterized in this study. A total of nine typical semiconductor fabricators (fabs) were monitored over a 12-month period (October 2000-September 2001). A flame ionization analyzer was employed to measure the VOC emission rate continuously in a real-time fashion. The amount of chemical use was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County as per the regulation of the Taiwan Environmental Protection Administration. The VOC emission factor, defined as the emission rate (kg/month) divided by the amount of chemical use (L/month), was determined to be 0.038 ± 0.016 kg/L. A linear regression equation is proposed to fit the data with the correlation coefficient (R²) = 0.863. The emission profiles of VOCs, which were drawn using the gas chromatograph/mass spectrometer analysis method, show that isopropyl alcohol is the dominant compound in most of the fabs.     

Inorganic acid emission factors of semiconductor manufacturing processes

A huge amount of inorganic acids can be produced and emitted with waste gases from integrated circuit manufacturing processes such as cleaning and etching. Emission of inorganic acids from selected semiconductor factories was measured in this study. The sampling of the inorganic acids was based on the porous metal denuders, and samples were then analyzed by ion chromatography. The amount of chemical usage was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County according to the Taiwan Environmental Protection Agency regulation. The emission factor is defined as the emission rate (kg/month) divided by the amount of chemical usage (L/month). Emission factors of three inorganic acids (i.e., hydrofluoric acid [HF], hydrochloric acid [HCl], and sulfuric acid [H2SO4]) were estimated by the same method. The emission factors of HF and HCl were determined to be 0.0075 kg/L (coefficient of variation [CV] = 60.7%, n = 80) and 0.0096 kg/L (CV = 68.2%, n = 91), respectively. Linear regression equations are proposed to fit the data with correlation coefficient square (R2) = 0.82 and 0.9, respectively. The emission factor of H2SO4, which is in the droplet form, was determined to be 0.0016 kg/L (CV = 99.2%, n = 107), and its R2 was 0.84. The emission profiles of gaseous inorganic acids show that HF is the dominant chemical in most of the fabricators.