Composition and crystal structure of N doped TiO2 film deposited at different O2 flow rate by direct current sputtering |
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| Authors: | Wanyu Ding Dongying Ju Weiping Chai |
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| Institution: | 1. School of Material Science and Engineering, Dalian Jiaotong University, Dalian 116028, China;2. Engineering Research Center of Optoelectronic Materials & Devices, Education Department of Liaoning Province, Dalian 116028, China;3. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China;4. Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293, Japan;1. Institute for Semiconductor & Microsystems Technology (IHM), Technical University of Dresden, 01062 Dresden, Germany;2. Leibniz Institute for Solid State and Materials Research Dresden (IFW), Germany;1. Instituto de Investigaciones en Fisicoquímica de Córdoba (INFIQC-CONICET), Departamento de Fisicoquímica, Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Ala 1, Pabellón Argentina, Ciudad Universitaria, 5000 Córdoba, Argentina;2. Centro de Investigaciones en Química Biológica de Córdoba (CIQUIBIC-CONICET), Departamento de Química-Biológica, Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Ala 1, Pabellón Argentina, Ciudad Universitaria, 5000 Córdoba, Argentina;3. Departamento de Farmacia, Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Haya de la Torre y medina Allende, Ciudad Universitaria, 5000 Córdoba, Argentina;1. Programa de Pós-Graduação em Física, Campus Prof.José Aluísio de Campos, UFS, 49100-000 São Cristóvão, SE, Brazil;2. Instituto Federal de Alagoas – Campus Piranhas, 57460-000 Piranhas, AL, Brazil;3. Programa de Pós-Graduação em Física, UFSCar, 13565-905 São Carlos, SP, Brazil;4. Instituto de Física “Gleb Wataghin” UNICAMP, 13083-970, Campinas, SP, Brazil;5. Instituto de Física, Universidade Federal Fluminense, 24210-346, Niterói, Rio de Janeiro, Brazil;1. Department of Physics, Government M.L.B. Girls P.G. College, Bhopal 462-002, India;2. Department of Physics, Barkatullah University, Bhopal 462-026, India;1. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi, China;2. Department of Physics and Opt-Electronic Engineering, Xi’an University of Arts and Science, Xi’an 710065, Shaanxi, China;3. Linyi University, Linyi 276000, Shandong, China |
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| Abstract: | N doped Ti02 films were deposited by direct current pulse magnetron sputtering system at room temperature. The influence of 02 flow rate on the crystal structure of deposited films was studied by Stylus profilometer, X-ray photoelectron spectroscopy, and X-ray diffractometer. The results indicate that the 02 flow rate strongly controls the growth behavior and crystal structure of N doped Ti02 film. It is found that N element mainly exists as substitutional doped state and the chemical stiochiometry is near to TiO1.68±0.06N0.11±0.01 for all film samples. N doped Ti02 film deposited with 2 sccm (standard-state cubic centimeter per minute) 02 flow rate is amorphous structure with high growth rate, which contains both anatase phase and rutile phase crystal nucleuses. In this case, the film displays the mix-phase of anatase and rutile after annealing treatment. While N doped Ti02 film deposited with 12 cm3/min 02 flow rate displays anatase phase before and after annealing treatment. And it should be noticed that no TiN phase appears for all samples before and after annealing treatment. |
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