某型混合集成电路长期贮存寿命研究

目的研究某型混合集成电路在自然环境下的贮存寿命。方法选用某型混合集成电路在A(寒温)、B(亚湿热)、C(亚湿热)、D(热带海洋)等4地开展为期172个月的库房贮存试验,跟踪测试其性能参数增益。应用灰色预测理论中的灰色GM(1,1)模型,对该型混合集成电路的贮存寿命进行预测,结果 D地的寿命最长,为32年;A地的寿命最短,为21年。结论温度较差是增益退化的最优影响因素。就该型混合集成电路而言,B地和C地的环境应力对其影响无明显差异。

Study on Long-term storage lifetime of a HIC

Objective To study the storage life of a HIC in a natural environment.Methods Storage test of a HIC was carried out in warehouses at 4 places, A (cold temperate climate), B (subtropical warm wet climate), C (subtropical warm wet climate) and D (tropical marine climate) for a period of 172 months. Their performance parameters were traced and tested. It's storage life was predicted by GM (1, 1) model in the grey prediction theory.Results The storage life at place D was the longest and the storage life at place A was the shortest. The storage life at place A was 21 years. The storage life at place D was 32 years.Conclusion The temperature range is the primary parameter which affects degradation of gain. In terms of this HIC, there is little difference in the effect of environmental stress at B and C.