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Modeling the current-voltage characteristics of thin-film silicon solar cells based on photo-induced electron transfer processes |
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| Authors: | Satoru Isoda |
| Institution: | 1. Department of Physics, National Institute of Technology, Raipur 492010, India;2. Department of Physics, K.I.I.T. University, Bhubaneswar, India;3. Department of Physics, National Institute of Technology, Durgapur, India;1. Department of Environmental Chemistry & Bioanalytics, Faculty of Chemistry, Nicolaus Copernicus University, Gagarin 7 St., 87-100 Torun, Poland;2. Physicochemistry of Carbon Materials Research Group, Faculty of Chemistry, Nicolaus Copernicus University, Gagarin 7 St., 87-100 Torun, Poland;3. Department of Chemistry, San Jose State University, One Washington Square, San Jose, CA 95192, USA;1. Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif, Tunisia;2. Science faculty of Bizerte–Carthage University, Tunisia;3. Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse, Tunisia;4. Laboratory of Physical Chemistry of Minerals and Materials Applications, National Research Center for Materials Science, Technopole Borj Cedria, Tunisia;1. Center for Low-Dimensional Materials, Micro-Nano Devices and System, Changzhou University, Changzhou 213164, China;2. Jiangsu Key Laboratory for Solar Cell Materials and Technolgy, Changzhou 213164, China;3. Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou 213164, China |
| Abstract: | Power conversion efficiency of p-i-n type macrocrystalline silicon (µc-Si:H) solar cells has been analyzed in terms of sequential processes of photo-induced electron transfer. The effect of the excitonic state on the charged carrier generation has been studied compared to a conventional scheme in which only charged carriers are taken into account for the operation of the solar cells. A numerical model has been developed to calculate current-voltage characteristics of solar cells on the basis of two types of charged carrier generation processes (exciton process and charged carrier process). The light trapping effect due to a textured back surface reflector (BSR) was embedded in the numerical model by using the effective medium theory in combination with the matrix method in the field of the electromagnetic theory of light. As an application of this modeling, it was found that the reported data of the power conversion efficiency were not explained by the conventional charged carrier process model and that the combined model of the charged carrier process with the exciton process well explains the performance of the p-i-n type μc-Si:H solar cells. In this way, the typical power conversion efficiencies were estimated to be 10.5% for the device (i-layer thickness: 1.8 μm) with the BSR (period: 600 nm; height: 250 nm) and 8.6% for the device with the flat reflector under the condition that the fractions of the exciton process and charged carrier process were 60% and 40%, respectively. |
| Keywords: | solar cell thin-film silicon microcrystalline silicon p-i-n type current-voltage characteristics power conversion efficiency photo-induced electron transfer diffusion length exciton light trapping |
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