| 有源相控阵可靠性分析及设计 |
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| 引用本文： | 邓林,邓明,张成伟,何文波.有源相控阵可靠性分析及设计[J].装备环境工程,2012,9(2):21-24. |
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| 作者姓名： | 邓林 邓明 张成伟 何文波 |
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| 作者单位： | 1. 中国电子科技集团公司第二十九研究所,成都,610036
2. 中国人民解放军驻电子二十九所军事代表室,成都,610036 |
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| 摘 要： | 基于有源相控阵原理和特点,对有源相控阵可靠性特征展开了分析。在同等复杂度下,采用可靠性表决模型和全串联模型对可靠性特征进行了对比分析,给出了有源相控阵表决模型设计的工程经验参数,并利用氮化镓器件对有源相控阵高可靠性设计进行了展望。
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| 关 键 词： | 雷达工程 可靠性 表决模型 氮化镓 有源相控阵 |
| 收稿时间： | 2011/11/8 0:00:00 |
Reliable Analysis and Design for Active Phased Array |
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| DENG Lin,DENG Ming,ZHANG Cheng-wei and HE Wen-bo.Reliable Analysis and Design for Active Phased Array[J].Equipment Environmental Engineering,2012,9(2):21-24. |
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| Authors: | DENG Lin DENG Ming ZHANG Cheng-wei and HE Wen-bo |
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| Institution: | 1. No. 29 Research Institute of China Electronics Technology Group Corporation, Chengdu 610036, China; 2. Military Representative Office in No. 29 Research Institute, Chengdu 610036, China) |
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| Abstract: | The reliability feature of active phased array was discussed based on its principle and technical features. The reliability feature of active phased array was compared and analyzed using m-out-of-n model and serial model in different complexity. The reliability design parameters of active phased array in m-out-of-n model were put forward. High reliability design of active phased array was prospected with example of GaN high-electron mobility transistors （HEMTs）. |
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| Keywords: | radar engineering reliability m-out-of-n model GaN active phased array |
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