石墨烯薄膜原子氧剥蚀行为及电阻特性

目的研究石墨烯薄膜在原子氧空间环境的适应性,为其在航天器上应用提供参考。方法采用刮涂法制备石墨烯薄膜,将石墨烯薄膜材料及石墨烯电阻传感器置于微波源原子氧设备内开展原子氧试验,原子氧剂量分别为3.0×10^20 atoms/cm2和7.5×10^20 atoms/cm^2,研究薄膜表面形貌、结构、成分及电阻性能的变化。结果采用刮涂法可制备氧含量较低的石墨烯薄膜,原子氧剂量为7.5×10^20 atoms/cm^2情况下,石墨烯薄膜的厚度损失为5.3μm,原子氧反应率为7.14×10^-25 atoms/cm^3。原子氧作用后,石墨烯薄膜中碳原子无序程度增大,C—O、—COOH官能团含量降低,C=O官能团含量增加。石墨烯电阻传感器的R0/R比值随原子氧剂量增加线性降低,0.8μm厚度薄膜可探测最大原子氧剂量为5×10^19 atoms/cm^2,增加薄膜厚度有望提高传感器的使用寿命。结论得到了石墨烯薄膜厚度损失、原子氧反应率、微观结构及电阻特性的变化规律,可为石墨烯薄膜的空间应用提供技术支撑。

Atomic Oxygen Erosion Behavior and Resistance Characteristic of Graphene Film

The paper aims to study the space atomic oxygen(AO)environment adaptability of graphene film,to provide reference for its space applications.In this paper,the graphene film was fabricated by the blade-coating method.The AO irradiation test was conducted with microwave source AO simulation facility containing graphene film material and graphene resistance sensor and the AO fluence was 3.0×10^20 atoms/cm^2 and 7.5×10^20 atoms/cm^2,respectively.The variations in surface morphology,surface composition,and resistance properties were investigated.It was found that low oxygen content graphene film can be fabricated by the blade-coating method.The film thickness loss was 5.3μm and the atomic irradiation erosion yield was no more than 7.14×10^-25 atoms/cm^3 when the AO fluence was 7.5×10^20 atoms/cm2.The intensity of C—O and—COOH peak significantly decreased,and C=O peak increased obviously after AO exposure,indicating disorder increase of carbon atom.The resistance data showed a linear relationship between R0/R and AO fluence,the maximum AO detect fluence can reach 5×10^19atoms/cm^3 when the film thickness was 0.8μm.Increase of film thickness was expected to improve service life of the sensor.The thickness loss,AO erosion yield,film structure,and resistance characteristic of graphene film are obtained,which could provide technical support for the space application of graphene film.