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真空紫外-亚硫酸盐法降解PFOS影响因素
引用本文:韩慧丽,王宏杰,董文艺.真空紫外-亚硫酸盐法降解PFOS影响因素[J].环境科学,2017,38(4):1477-1482.
作者姓名:韩慧丽  王宏杰  董文艺
作者单位:哈尔滨工业大学深圳研究生院土木与环境工程学院, 深圳市水资源利用与环境污染控制重点实验室, 深圳 518055,哈尔滨工业大学深圳研究生院土木与环境工程学院, 深圳市水资源利用与环境污染控制重点实验室, 深圳 518055,哈尔滨工业大学深圳研究生院土木与环境工程学院, 深圳市水资源利用与环境污染控制重点实验室, 深圳 518055
基金项目:国家水体污染控制与治理科技重大专项(2015ZX07206-006);深圳市科技计划项目(CYJ20160318093930497)
摘    要:通过试验,考察了亚硫酸盐浓度、pH值、全氟辛烷磺酸(perfluorooctane sulfonate,PFOS)初始质量浓度及共存物质对真空紫外-亚硫酸盐法降解PFOS的影响.结果表明,亚硫酸盐浓度的增加有利于提高活性物种水合电子的量,PFOS降解率及脱氟率均随之提高,亚硫酸盐浓度从1 mmol·L~(-1)增加至20 mmol·L~(-1)时,PFOS降解率及脱氟率分别从45%及40%提高至97%及63%;随着原水pH值的升高,水合电子的生成量也随之增加,PFOS的降解率及脱氟率均提高,且脱氟率对pH值的变化更敏感;PFOS初始质量浓度的提高降低了PFOS的降解率及脱氟率,但PFOS的绝对降解量却大幅提高,当PFOS初始质量浓度从1 mg·L~(-1)提高至50 mg·L~(-1)时,PFOS在4 h内的降解量提高了约50倍,这主要是由于高污染物浓度条件下水合电子的利用率较高;Cl~-或HCO_3~-的存在对PFOS降解率影响较小,但对脱氟的影响较为明显,在试验研究的浓度范围内,PFOS脱氟率随Cl~-浓度的增加而提高,随HCO_3~-浓度的增加呈现先升高后降低的规律;腐殖酸的存在屏蔽了部分用于光化学反应的光,而且可以捕获体系的活性物种,从而降低了降解率及脱氟率.

关 键 词:全氟辛烷磺酸(PFOS)  真空紫外-亚硫酸盐法  水合电子  影响因素  光化学还原
收稿时间:2016/9/26 0:00:00
修稿时间:2016/11/3 0:00:00

Influencing Factors on the Degradation of PFOS Through VUV-SO32-
HAN Hui-li,WANG Hong-jie and DONG Wen-yi.Influencing Factors on the Degradation of PFOS Through VUV-SO32-[J].Chinese Journal of Environmental Science,2017,38(4):1477-1482.
Authors:HAN Hui-li  WANG Hong-jie and DONG Wen-yi
Institution:Shenzhen Key Laboratory of Water Resource Application and Environmental Pollution Control, School of Civil and Environmental Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China,Shenzhen Key Laboratory of Water Resource Application and Environmental Pollution Control, School of Civil and Environmental Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China and Shenzhen Key Laboratory of Water Resource Application and Environmental Pollution Control, School of Civil and Environmental Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China
Abstract:The objective of this experiment was to investigate the influence of SO32-dosage, pH value, initial perfluorooctane sulfonate(PFOS)concentration as well as coexisting substances on the degradation and defluorination of PFOS by VUV-SO32- process. The results indicated that the increase of SO32- dosage could lead to rise in the concentration of active species hydrated electron(eaq-) and thus enhance the degradation and defluorination of PFOS. As the concentration of SO32- increased from 1 mmol·L-1 to 20 mmol·L-1, the degradation and defluorination rates of PFOS increased from 45% and 40% to 97% and 63%, respectively. The degradation and defluorination of PFOS were also enhanced with the increment of the solution pH values, and the defluorination was more sensitive to the pH values. In addition, more PFOS was degraded with the increase of initial PFOS mass concentration, although the degradation and defluorination rates of PFOS were reduced. When the initial PFOS mass concentration changed from 1 mg·L-1 to 50 mg·L-1, the degradation amount of PFOS after four hrs increased by about 50 times, probably due to the higher utilization proportion of eaq- at high pollutants concentration. Last but not least, the influence of co-existing substances, Cl- and HCO3-, on PFOS degradation could be neglected, whereas their effects on defluorination were observed. Defluorination of PFOS was enhanced with the increased Cl- concentration, however, increased first and then decreased with the increment of HCO3- concentration. It was also found that the presence of humic acid(HA) lowered degradation as well as defluorination of PFOS owing to the blockage of effective UV light and trapping of active species for photochemical reaction.
Keywords:perfluorooctane sulfonate(PFOS)  VUV-SO32-  hydrated electron(eaq-)  influencing factors  photochemical reduction
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