Preparation of TiO2/MCM-41 by plasma enhanced chemical vapor deposition method and its photocatalytic activity

Titanium dioxide is coated on the surface of MCM-41 wafer through the plasma enhanced chemical vapor deposition (PECVD) method using titanium isopropoxide (TTIP) as a precursor. Annealing temperature is a key factor affecting crystal phase of titanium dioxide. It will transform an amorphous structure to a polycrystalline structure by increasing temperature. The optimum anatase phase of TiO₂ which can acquire the best methanol conversion under UV-light irradiation is obtained under an annealing temperature of 700°C for 2 h, substrate temperature of 500°C, 70 mL·min^?1 of oxygen flow rate, and 100W of plasma power. In addition, the films are composed of an anatase-rutile mixed phase, and the ratio of anatase to rutile varies with substrate temperature and oxygen flow rate. The particle sizes of titanium dioxide are between 30.3 nm and 59.9 nm by the calculation of Scherrer equation. Under the reaction conditions of 116.8 mg·L^-1 methanol, 2.9 mg·L^?1 moisture, and 75°C of reaction temperature, the best conversion of methanol with UV-light is 48.2% by using the anatase-rutile (91.3/8.7) mixed phase TiO₂ in a batch reactor for 60 min. While under fluorescent light irradiation, the best photoactivity appears by using the anatase-rutile (55.4/44.6) mixed phase TiO₂ with a conversion of 40.0%.