半导体材料生产废水中的GaAs、Ga~(3+)和Ge~(4+)对活性污泥核酸和氨基酸的影响

研究了GaAs、Ga~(3+)、Ge~(4+)、Hg~(2+)和Cr~(6+)对活性污泥脱氧核糖核酸(DNA)和核糖核酸(RNA)的影响,以及GaAs对活性污泥氨基酸的影响。结果表明,Hg~(2+)和Cr~(6+)主要使活性污泥中核酸的DNA含量减少,GaAs则主要使RNA含量减少,Ge~(4+)浓度达到300ppm/g MLSS对,无论对DNA还是RNA的合成都有较强的抑制影响。低浓度的GaAs对活性污泥氨基酸含量影响不大,而GaAs浓度达360ppm/g MLSS时则使活性污泥中氨基酸含量明显减少。

Influence of GaAs, Ga3+ and Ge4+in Waste Water from Semiconductor Material Production on DNA or RNA and Amine Acids in Activated sludge.

Influence of GaAs Ga3+,Ge4+,Hg4+,Hg2+, andCr6+ on DNA Or RNA and that of GaAs on amino acid in activared sludge were studied. It was found that Hg2+ and Cr6+ mainly reduce the content of DNA and CaAs mainly meduces the content of RNA in activated sludge, respectively. Strong inhibition effect on the synthesis of either DNA or RNA was observed at concentrations of Ge4+ above 300 mg/L/gMLSS. Low concentration of GaAs did not exert considerable influence on the content of amino acid in the sludge, while High concentration of GaAs reduced the content of amino acid drasticly.