镧对UV-B胁迫下大豆幼苗类黄酮含量与抗氧化能力影响

为进一步认识La(Ⅲ)提高类黄酮含量及减轻UV-B辐射伤害植物机制,以大豆幼苗为材料,采用水培实验的方法研究了La(Ⅲ)对UV-B辐射胁迫下大豆幼苗类黄酮抗氧化能力的动态影响.结果表明, UV-B辐射(T1:0.15W·m-2和T2:0.45W·m-2)胁迫下,大豆幼苗类黄酮含量在胁迫期和恢复期均先升后降,质膜透性、MDA含量先升(1～5d)后降(6～11d),类黄酮对O·-2和·OH的清除率与其含量变化趋势近同.各处理组类黄酮含量La(Ⅲ) UV-B>UV-B>La(Ⅲ)>CK, La(Ⅲ) T1>La(Ⅲ) T2;质膜透性、MDA含量UV-B>La(Ⅲ) UV-B>CK>La(Ⅲ), La(Ⅲ) T2>La(Ⅲ) T1;类黄酮对O-2和·OH清除率La(Ⅲ) UV-B>UV-B>La(Ⅲ)>CK, La(Ⅲ) T1, La(Ⅲ) T2,表明La(Ⅲ)对类黄酮的调控作用,提高了清除活性氧自由基的运行效率,降低了MDA浓度,维持了质膜正常透性,且对低剂量(T1)的防护效果优于高剂量(T2),进而在防御系统层面实现了La(Ⅲ)对UV-B辐射伤害大豆幼苗的防护效应.

Effect of Lanthanum on the Flavonoids Contents and Antioxidant Capacity in Soybean Seedling Under Ultraviolet-B Stress

Dynamic state of antioxidant capacity of flavonoids was investigated for a further demonstration of alleviating the damage of the UV-B radiation in the La-treated soybean seedlings under UV-B stress. Using hydroponics culture, the effects of lanthanum on the contents of flavonoids and its ability of antioxidant under elevated ultraviolet-B radiation (280-320 nm) was studied in this paper. The results showed flavonoids contents in Soybean seedlings during the stress and convalescent period increase firstly and then reduce. Membrane permeability and MDA contents increase firstly (1st-5th day) and then fall (6th to 11th day). A similar change of flavonoids contents and clearance of flavonoids scavenging O2*- and *OH in soybean seedlings occur; the flavonoids contents La(III) + UV-B > UV-B > La(III) > CK, La(III) + T1 > La(III) + T2. Plasma membrane permeability and MAD contents UV-B> La(III) + UV-B > CK > La(III), La(III) + T2 > La(III) + T1. The ability of Scavenging activities of free radical (O2*-, *OH) La(III) + UV-B > UV-B > La(III) > CK. It suggested that the regulative effect of La(III) on flavonoids, improved the metabolism of ROS, diminished the concentration of MDA and maintained normal Plasma membrane permeability, and that its protective effect against low UV-B radiation was superior to that of high UV-B radiation. To conclude, the defensive effect of La(III) on soybean seedlings under UV-B stress was carried out on the layer of defense system.