半导体存储介质破碎-分选系统的因子优化设计

废弃半导体存储介质一方面载有隐私信息，需要被安全销毁，另一方面富含金属导体、半导体、绝缘体材料，极具回收价值。提出用破碎-风力-高压静电分选系统对其进行安全销毁和物料分选，其中多级破碎部分使信息半导体硅存储材料破碎至0.80 mm以下，而风力-高压静电分选部分能实现半导体、导体、绝缘体的分选。为确定系统工艺参数，实验对风机蝶阀角度（α），风机频率（f），电选电压（U），电选机转辊转速（n）等因素对半导体收集量（M）的影响进行研究，通过因子设计建立了非线性数学模型：M=1.943 8-0.418 7α*+0.306 2f*-0.193 7 f*U*n*+0.181 3α*f*U。进而通过响应优化得出最优工艺参数设置为：α=30°，f=45 Hz，U=30 kV，n=40 r·min-1。在此参数下，金属导体收集率达90.3%，半导体硅收集率达61.0%，实现了半导体存储介质破碎销毁和物料分选。

Factor design of crushing-cyclone-electrostatic separation system for recovery of semiconductor storage medium

Storage mediums need to be destroyed safely to protect privacy and their valuable conductor, semiconductor, and nonconductor material needs to be recycled. The suitability of a crushing-cyclone-high voltage electrostatic separation system was investigated for this purpose. Semiconductor information storage material must be crushed into fragments no larger than 0.80 mm Cyclone and high voltage electrostatic separation can achieve resource recovery. In order to determine the parameters of the system, a nonlinear mathematical model was established after studying the relationship between the semiconductor quality (M) and the butterfly angle (α), fan frequency (f), electric voltage (U), and the speed of rotation (n):M=1.943 8-0.418 7α*+0.306 2f*-0.193 7f*U*n*+0.181 3α*f*U. Thus, the optimal parameters of the process obtained are as follows:α=300, f=45 Hz, U=30 kV, and n=40 r·min-1. Using these parameters, the collection rate of the metal conductor was above 90%, and the collection rate of semiconductor silicon was 61%. The safe destruction and resource recovery of the semiconductor storage medium was achieved.