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低品位电镀污泥对氧化亚铁硫杆菌活性的影响
引用本文:张再平,应群姣,马王钢.低品位电镀污泥对氧化亚铁硫杆菌活性的影响[J].环境污染治理技术与设备,2013(9):3555-3560.
作者姓名:张再平  应群姣  马王钢
作者单位:[1]浙江省工业环保设计研究院有限公司,杭州310005 [2]杭州佳达环保科技有限公司,杭州310012
摘    要:以氧化亚铁硫杆菌(Thiobacillus ferroxidans,以下简称T.f菌)和低品位电镀污泥(干污泥中主要重金属组分低于3%的电镀污泥,以下简称污泥)为主要实验材料,研究了不同污泥浓度、初始pH对T.f菌Fe2+氧化速率的影响。将实验组中T.f菌重新接种于新鲜9 K液体培养基,以考察T.f菌经实验处理后对新鲜9 K液体培养基中Fe2+的氧化能力,结果表明,低品位电镀污泥对T.f菌Fe2+氧化速率具有显著抑制作用,2.5 g/L的污泥浓度即可使T.f菌Fe2+氧化速率由23.86 mg/(mL·h)降低至10.72 mg/(mL·h);调节溶液初始pH,可有限改善T.f菌在低污泥浓度条件下的Fe2+氧化速率,但在较高污泥浓度时,对其Fe2+氧化速率无促进作用。

关 键 词:氧化亚铁硫杆菌  低品位电镀污泥  亚铁  pH值

Effect of low grade electroplating sludge on bioactivity of Thiobacillus ferroxidans
Zhang Zaiping,Ying Qunjiao,Ma Wanggang.Effect of low grade electroplating sludge on bioactivity of Thiobacillus ferroxidans[J].Techniques and Equipment for Environmental Pollution Control,2013(9):3555-3560.
Authors:Zhang Zaiping  Ying Qunjiao  Ma Wanggang
Institution:1. Zhejiang Industry Environmental Protection Institute Co. Ltd. , Hangzhou 310005, China; 2. Hangzhou Jiada Environmental Protection Technology Co. Ltd. , Hangzhou 310012, China)
Abstract:In this study,Thiobacillus ferroxidans and low grade electroplating sludge were main experimental materials.The oxidation rate of Fe2 +by Thiobacillus ferroxidans under the condition with different concentrations of low grade electroplating sludge and changing the initial pH of the treatment groups was studied.There were eight treatments in this experiment,and four treatments' initial pH were adjusted to 2.5.The results showed that low grade electroplating has significant inhibitory effect on the oxidation rate of Fe2 +by Thiobacillus ferroxidans,it can decrease the oxidation rate of Fe2 +from 23.86 mg /(mL·h) to 10.72 mg /(mL· h) with concentration of 2.5 g / L.Adjusting the initial pH of the solution could ameliorate the oxidation rate of Fe2 +by Thiobacillus ferroxidans in low concentration of electroplating sludge,but no promoting at higher concentrations.
Keywords:Thiobacillus ferroxidans  low grade electroplating sludge  ferrous ion  pH
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