| 1/f噪声源与其在半导体器件可靠性评估中的应用 |
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| 引用本文： | 郭春生,刘鹏飞,李秀宇,李志国.1/f噪声源与其在半导体器件可靠性评估中的应用[J].环境技术,2008,26(4):32-34. |
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| 作者姓名： | 郭春生 刘鹏飞 李秀宇 李志国 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院可靠性研究室 |
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| 摘 要： | 1／f噪声，由于其能够反映器件的质量与可靠性参数，其研究受到重视。本文首先较为系统地介绍了1／f噪声源两种较为成熟的理论：迁移率涨落模型和载流子涨落模型，最后介绍了几个1／f噪声与半导体器件参数漂移相关的实例。
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| 关 键 词： | 1/f噪声 迁移率涨落模型 载流子涨落模型 器件参数漂移 |
1/f Noise Source and Application Thereof in Reliability Evaluation of Semiconductor Device |
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| GUO Chun-sheng,LIU Peng-fei,LI Xiu-yu,LI Zhi-guo.1/f Noise Source and Application Thereof in Reliability Evaluation of Semiconductor Device[J].Environmental Technology,2008,26(4):32-34. |
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| Authors: | GUO Chun-sheng LIU Peng-fei LI Xiu-yu LI Zhi-guo |
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| Institution: | GUO Chun-sheng, LIU Peng-fei, LI Xiu-yu ,LI Zhi-guo |
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| Abstract: | Due to 1/f noise can reflect the quality and reliability of devices, the study has garnered interest. The article systematically introduced two kinds mature theory of 1/f noise source： mobility fluctuation model and carrier fluctuation model. Then several examples of 1/f noise related to drifting of semiconductor parameter were introduced. |
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| Keywords: | 1/f noise mobility fluctuation model carrier fluctuation model drifting of device parameter |
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