水热反应时间对氧化锌半导体材料吸波性能的影响

目的研究水热反应时间对氧化锌吸波性能的影响,以获得高性能吸波材料。方法通过控制水热反应时间,制备不同形貌的氧化锌半导体材料,并采用XRD、SEM、TEM等表征手段,分析水热反应时间对氧化锌半导体材料形貌及结构的影响。利用矢量网络分析仪测定该材料在2~18 GHz频率范围内的相对复介电常数和复磁导率,采用MATLAB模拟分析不同厚度下水热反应时间对氧化锌半导体材料吸波机制及吸波性能的影响。结果当水热反应时间为12 h时,氧化锌在高频率处可达到较好的吸波效果,最大回波损耗可达?52.86 dB。结论通过控制水热反应时间,可实现对氧化锌的形貌进行调控,进而得到吸波性能优异的氧化锌吸波材料。

Influence of Hydrothermal Reaction Time on the Absorber Performance of Zinc Oxide Semiconductor Materials

The work aims to study the effect of hydrothermal reaction time on microwave absorber performance of ZnO. The ZnO semiconductor materials of different morphologies are prepared by controlling the hydrothermal reaction time, and they are characterized by XRD, SEM and TEM methods in order to evaluate the effects of hydrothermal reaction time on the morphology and structure of ZnO semiconductor materials. The relative complex permittivity and complex permeability of the material in the frequency range of 2~18 GHz are measured by vector network analyzer. The effects of hydrothermal reaction time on absorbing mechanism and microwave absorber performance of ZnO semiconductor materials under different thickness are simulated by MATLAB. The results show that when the hydrothermal reaction time is 12 h, ZnO has better microwave absorber performance at high frequencies, and the maximum return loss is up to-52.86 dB.By controlling the hydrothermal reaction time, the morphology of ZnO can be controlled, and the excellent absorber performance of ZnO can be obtained.