首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Influence of drying and calcination temperatures for Ce-Cu-Al trimetallic composite catalyst on simultaneous removal H2S and PH3: Experimental and DFT studies
Authors:Yingwu Wang  Qiang Lin  Chi Wang  Kai Li  Xin Sun  Xin Song  Yangyan Gao  Ping Ning
Institution:1. Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming 650500, China;2. Faculty of Chemical Engineering, Kunming University of Science and Technology, Kunming 571158, China;3. Hainan Normal University, Haikou 650500, China;4. Department of Environmental Engineering, Shanxi University, Taiyuan 030001, China
Abstract:This work explored the influences of the drying and calcination temperatures on a Ce-Cu-Al trimetallic composite catalyst for the simultaneous removal of H2S and PH3. The effects of both temperatures on the structural features and activity were examined. The density functional theory method was used to calculate adsorption energies and further analyze their adsorption behavior on different slabs. Experiments revealed suitable drying and calcination temperatures to be 60 and 500°C, respectively. The capacity reached 323.8 and 288.1 mg/g. Adjusting drying temperature to 60°C is more inclined to form larger and structured grains of CuO. Rising calcinating temperature to 500°C could increase the grain size and redox capacity of CuO to promote performance. Higher temperatures would destroy the surface structure and lead to a crystal phase transformation, which was that the CuO and Al2O3 were gradually recombined into CuAl2O4 with a spinel structure. The exposed crystal planes of surficial CuO and CuAl2O4 were determined according to characterization results. Calculation results showed that, compared with CuO (111), H2S and PH3 have weaker adsorption strength on CuAl2O4 (100) which is not conducive to their adsorption and removal.
Keywords:Corresponding authors    Temperatures  2  3  CuO (111)  2
点击此处可从《环境科学学报(英文版)》浏览原始摘要信息
点击此处可从《环境科学学报(英文版)》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号