Robust reliability and electrical performances by the bulk-contact modulation in 60-V p-channel LDMOS power components

To increase reliability and electrical performance, shallow-trench isolation (STI) (or called field-oxide (FOX)) structures were inserted in the bulk-contact region of 60-V high-voltage p-channel lateral-diffused MOSFET (pLDMOS) devices in this study. As the FOX ratio increased with the addition of FOX segments, the value of the secondary breakdown current (I_t2) was enhanced. Therefore, the anti-electrostatic discharge ability of a pLDMOS device can be efficiently improved using this novel method. In addition, when the weighting ratio of FOX structures increased, variation values in the trigger voltage (V_t1) and holding voltage (V_h) of the corresponding samples remained within the range of approximately 1–4 V. The R_on value decreased because of more uniform conduction. The experimental data for the FOX structures added to the bulk revealed that the I_t2 value was improved by approximately 13.98%, V_h values were greater than 60 V (which is favorable for latch-up immunity), and the R_on value was decreased by approximately 12.62% compared with a reference device under test (without FOX segments in the bulk-contact region).