快速断电安全技术中半导体中性点开关结构性能的研究

对我国目前半导体中性点开关的结构 ,工作过程 ,性能进行了分析 ;现行中性点开关所存在的问题为电路拓扑结构不合理 ,关断时间过长或过短 ,过长不满足快速断电安全技术的要求 ,过短又易引起过电压 ,使中性点开关失控。笔者提出了采用绝缘门极双极性晶体管 (IGBT) ,构成半导体中性点开关的可行方案。同时指出 ,开发新型快速断电安全技术装置 ,将大大提高我国煤矿安全技术水平

Study on Structure and Property of Semiconductive Neutral Point Switch in Safety Technique of Prompt Interruption

The structure,working process,and property of existing semiconductive neutral point switch in China are analyzed. The main problems of the existing switches are unreasonable circuit topological structure; the turn-off time is either too long or too short. If the turn-off time were too long, the switch would not meet the requirement of the safety technique of prompt interruption. If too short, it would cause over-voltage making the switch out of control. A feasible semiconductive neutral point switch scheme, which is formed by Isolated Gate Bipolar Transistor, is presented. Moreover, it is pointed out that developing new safety technique device of prompt interruption will promote safety technique level of coal mine in China.