首页 | 本学科首页   官方微博 | 高级检索  
     检索      

相对干燥条件下甲苯,苯和氯仿的光催化降解
引用本文:张彭义,陈清,余刚,田地,梁夫艳.相对干燥条件下甲苯,苯和氯仿的光催化降解[J].中国环境科学,2003,23(2):0-0.
作者姓名:张彭义  陈清  余刚  田地  梁夫艳
作者单位:清华大学环境科学与工程系,北京,100084
基金项目:国家自然科学基金资助项目(59908004,50178038)
摘    要: 研究了甲苯,苯和氯仿3种挥发性有机物在相对干燥条件下的动态气相光催化降解,考察了进口浓度,流量(停留时间),催化剂,光源等因素的影响.研究表明,在较低污染物浓度,流量小于0.2L/min(停留时间大于3.825min)时,甲苯,苯和氯仿的光催化去除率均大于90%,遵循一级反应动力学,甲苯和苯的半衰期分别在1.0~1.34min和0.65~1.1min;在研究的负荷范围内,甲苯和苯的去除量随负荷增加达到一个最大值,而氯仿则一直随之增大;催化剂的光催化性能与污染物种类有关,同样功率的杀菌灯效果好于黑光灯.

关 键 词:光催化  干燥空气    甲苯  氯仿
文章编号:1000-6923(2003)02-0139-05
收稿时间:1900-01-01;
修稿时间:2002年7月10日

Photocatalytic degradation of toluene benzene and chloroform in relatively dry condition
ZHANG Peng-yi,CHEN Qing,YU Gang,TIAN Di,LIANG Fu-yan.Photocatalytic degradation of toluene benzene and chloroform in relatively dry condition[J].China Environmental Science,2003,23(2):0-0.
Authors:ZHANG Peng-yi  CHEN Qing  YU Gang  TIAN Di  LIANG Fu-yan
Abstract:The dynamic gas phase photocatalytic degradation of toluene, benzene and chloroform (three volatile organic compounds) was studied in relatively dry condition, and the influences of inlet concentration, flow rate (retention time), photocatalyst and light source were investigated. The study showed that, at lower pollutant concentration and flow rate smaller than 0.2L/min (retention time larger than 3.825min), the photocatalytic removal rate of toluene, benzene and chloroform was higher than 90%, following first order reaction dynamics. The corresponding half-life times of toluene and benzene were about 1.0~1.34min and 0.65~1.1min respectively. In the loading range of the study, the amount of removed toluene and benzene reached maximum with increase of loading; however the amount of removed chlorform increased all along with it. The function of photocatalysts was related to the kind of pollutants, and germicidal lamp was better than black light lamp with same power.
Keywords:photocatalysis  dry air  benzene  toluene  chloroform
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《中国环境科学》浏览原始摘要信息
点击此处可从《中国环境科学》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号